IndiumV3, Main, Repository, bibRecord, 00E985

Strength enhancement of compensated strained InP/AlP superlattice

Identifieur interne : 00E985 ( Main/Repository ); précédent : 00E984; suivant : 00E986

Strength enhancement of compensated strained InP/AlP superlattice

Auteurs : RBID : Pascal:02-0190183

Descripteurs français

Pascal (Inist)
- Résistance mécanique, Compensation, Déformation mécanique, Epitaxie jet moléculaire, Plasticité, Relaxation, Microscopie électronique transmission, Indentation, Nanoindentation, Essai mécanique, Dureté, Limite élasticité, Indium phosphure, Semiconducteur, Aluminium phosphure, Superréseau, Composé binaire, Gallium arséniure, Aluminium arséniure, In P, InP, Al P, AlP, 6172F, 6865C, 6837L, As Ga, GaAs, Al As, AlAs.

English descriptors

KwdEn :
- Aluminium arsenides, Aluminium phosphides, Binary compounds, Compensation, Gallium arsenides, Hardness, Indentation, Indium phosphides, Mechanical strength, Mechanical tests, Molecular beam epitaxy, Nanoindentation, Plasticity, Relaxation, Semiconductor materials, Strains, Superlattices, Transmission electron microscopy, Yield strength.

Abstract

Compensated strained InP/AlP superlattices have been epitaxially grown on GaAs substrate by molecular-beam epitaxy. The period of the superlattice was chosen so that no plastic relaxation occurred in the layers. The superlattice structure was characterized by transmission electron microscopy and nanoindentation was used to test the mechanical performance of the superlattice. We have observed a very strong enhancement of hardness and yield strength that we have compared to previously reported behaviour of strain-free AlAs/GaAs superlattices.

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Pascal:02-0190183

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Strength enhancement of compensated strained InP/AlP superlattice</title>
<author><name sortKey="Le Bourhis, E" uniqKey="Le Bourhis E">E. Le Bourhis</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire de Métallurgie Physique, UMR 6630 CNRS, Université de Poitiers, SP2MI-Téléport, 2 Bd Marie et Pierre Curie, B.P., 30179</s1>
<s2>86962 Futuroscope-Chasseneuil</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Poitou-Charentes</region>
<settlement type="city">Futuroscope-Chasseneuil</settlement>
</placeName>
<orgName type="university">Université de Poitiers</orgName>
</affiliation>
</author>
<author><name sortKey="Patriarche, G" uniqKey="Patriarche G">G. Patriarche</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, France Telecom R&D, 196 Av Henri Ravera, B.P. 29</s1>
<s2>92222 Bagneux</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Bagneux</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">02-0190183</idno>
<date when="2002">2002</date>
<idno type="stanalyst">PASCAL 02-0190183 INIST</idno>
<idno type="RBID">Pascal:02-0190183</idno>
<idno type="wicri:Area/Main/Corpus">00F823</idno>
<idno type="wicri:Area/Main/Repository">00E985</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0031-8965</idno>
<title level="j" type="abbreviated">Phys. status solidi, A, Appl. res.</title>
<title level="j" type="main">Physica status solidi. A. Applied research</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term>
<term>Aluminium phosphides</term>
<term>Binary compounds</term>
<term>Compensation</term>
<term>Gallium arsenides</term>
<term>Hardness</term>
<term>Indentation</term>
<term>Indium phosphides</term>
<term>Mechanical strength</term>
<term>Mechanical tests</term>
<term>Molecular beam epitaxy</term>
<term>Nanoindentation</term>
<term>Plasticity</term>
<term>Relaxation</term>
<term>Semiconductor materials</term>
<term>Strains</term>
<term>Superlattices</term>
<term>Transmission electron microscopy</term>
<term>Yield strength</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Résistance mécanique</term>
<term>Compensation</term>
<term>Déformation mécanique</term>
<term>Epitaxie jet moléculaire</term>
<term>Plasticité</term>
<term>Relaxation</term>
<term>Microscopie électronique transmission</term>
<term>Indentation</term>
<term>Nanoindentation</term>
<term>Essai mécanique</term>
<term>Dureté</term>
<term>Limite élasticité</term>
<term>Indium phosphure</term>
<term>Semiconducteur</term>
<term>Aluminium phosphure</term>
<term>Superréseau</term>
<term>Composé binaire</term>
<term>Gallium arséniure</term>
<term>Aluminium arséniure</term>
<term>In P</term>
<term>InP</term>
<term>Al P</term>
<term>AlP</term>
<term>6172F</term>
<term>6865C</term>
<term>6837L</term>
<term>As Ga</term>
<term>GaAs</term>
<term>Al As</term>
<term>AlAs</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Compensated strained InP/AlP superlattices have been epitaxially grown on GaAs substrate by molecular-beam epitaxy. The period of the superlattice was chosen so that no plastic relaxation occurred in the layers. The superlattice structure was characterized by transmission electron microscopy and nanoindentation was used to test the mechanical performance of the superlattice. We have observed a very strong enhancement of hardness and yield strength that we have compared to previously reported behaviour of strain-free AlAs/GaAs superlattices.</div>
</front>
</TEI>
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<fA03 i2="1"><s0>Phys. status solidi, A, Appl. res.</s0>
</fA03>
<fA05><s2>189</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Strength enhancement of compensated strained InP/AlP superlattice</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>LE BOURHIS (E.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>PATRIARCHE (G.)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire de Métallurgie Physique, UMR 6630 CNRS, Université de Poitiers, SP2MI-Téléport, 2 Bd Marie et Pierre Curie, B.P., 30179</s1>
<s2>86962 Futuroscope-Chasseneuil</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, France Telecom R&D, 196 Av Henri Ravera, B.P. 29</s1>
<s2>92222 Bagneux</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>175-181</s1>
</fA20>
<fA21><s1>2002</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<s5>354000102197400180</s5>
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<fA44><s0>0000</s0>
<s1>© 2002 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>14 ref.</s0>
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<fA47 i1="01" i2="1"><s0>02-0190183</s0>
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<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physica status solidi. A. Applied research</s0>
</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Compensated strained InP/AlP superlattices have been epitaxially grown on GaAs substrate by molecular-beam epitaxy. The period of the superlattice was chosen so that no plastic relaxation occurred in the layers. The superlattice structure was characterized by transmission electron microscopy and nanoindentation was used to test the mechanical performance of the superlattice. We have observed a very strong enhancement of hardness and yield strength that we have compared to previously reported behaviour of strain-free AlAs/GaAs superlattices.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60A72F</s0>
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<fC02 i1="03" i2="3"><s0>001B60A16B</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Résistance mécanique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Mechanical strength</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Compensation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Compensation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Déformation mécanique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Strains</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Plasticité</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Plasticity</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Relaxation</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Relaxation</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Transmission electron microscopy</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Indentation</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indentation</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Nanoindentation</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Nanoindentation</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Nanoindentacion</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Essai mécanique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Mechanical tests</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Dureté</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Hardness</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Limite élasticité</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Yield strength</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Aluminium phosphure</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Aluminium phosphides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Superréseau</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Superlattices</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>19</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>19</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>20</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>20</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Aluminium arséniure</s0>
<s2>NK</s2>
<s5>21</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>21</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Al P</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>AlP</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>6172F</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>6865C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>6837L</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>Al As</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>AlAs</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC07>
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<s5>48</s5>
</fC07>
<fN21><s1>112</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
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Strength enhancement of compensated strained InP/AlP superlattice

Strength enhancement of compensated strained InP/AlP superlattice

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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